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| LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon 3 COLLECTOR 1 BASE MMBTA92LT1 MMBTA93LT1 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V V CEO CBO EBO 2 EMITTER Value MMBTA92 MMBTA93 -300 -300 -5.0 -500 -200 -200 1 Unit Vdc Vdc Vdc mAdc 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBTA92LT1 = 2D, MMBTA93LT1 = 2E ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = -1.0 mAdc, I B = 0) Collector-Emitter Breakdown Voltage (I C = -100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -100 Adc, I C = 0) Collector Cutoff Current ( V CB = -200Vdc, I E = 0) ( V CB = -160Vdc, I E = 0) Collector Cutoff Current ( V CB = -3.0Vdc, I C = 0) V MMBTA92 MMBTA93 V MMBTA92 MMBTA93 V (BR)EBO (BR)CBO (BR)CEO Vdc -300 -200 -300 -200 -5.0 -- -- Vdc -- -- -- Vdc nAdc -- -- -0.25 -0.25 -0.1 Adc I CBO MMBTA92 MMBTA93 I EBO -- 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. M32-1/3 LESHAN RADIO COMPANY, LTD. MMBTA92LT1 MMBTA93LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE Both Types Both Types MMBTA92 MMBTA93 VCE(sat) MMBTA92 MMBTA93 V BE(sat) Min Max Unit -- ON CHARACTERISTICS (3) DC Current Gain (I C =-1.0mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10Vdc) (I C = -30mAdc, V CE =-10 Vdc) Collector-Emitter Saturation Voltage (I C = -20mAdc, I B = -2.0 mAdc) Base-Emitter Saturation Voltage (I C = -20mAdc, I B = -2.0 mAdc) 25 40 25 25 -- -- -- -- -- -- -- Vdc -0.5 -0.5 -0.9 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(3),(4) (I C = -10mAdc, V CE= -20Vdc, f = 100MHz) Collector - Base Capacitance (V CB = -20 Vdc, I E = 0, f = 1.0 MHz) fT C cb MMBTA92 MMBTA93 -- -- 6.0 8.0 50 -- MHz pF 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. M32-2/3 LESHAN RADIO COMPANY, LTD. MMBTA92LT1 MMBTA93LT1 150 T J = +125C V CE = -10 Vdc h FE , DC CURRENT GAIN 100 +25C 70 50 -55C 30 20 15 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -80 -100 I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 100 50 100 80 60 T J = 25C V CE = -20 Vdc C ib C, CAPACITANCE (pF) 20 10 40 30 5.0 20 2.0 C cb 1.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 0 -1.0 -2.0 -5.0 -10 -20 -50 -100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 2. Capacitances -1.0 Figure 3. Current-Gain -- Bandwidth Product -0.8 V, VOLTAGE (VOLTS) V BE @ V CE = -10 V -0.6 -0.4 -0.2 V CE(sat) @ I C /I B = 10 mA 0 -1.0 -2.0 -5.0 -10 -20 -50 -100 I C , COLLECTOR CURRENT (mA) Figure 4. "On" Voltages M32-3/3 |
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